Navitas Selected for U.S. Army 10kV SiC Development Program
The ALATTIS program targets a domestic manufacturing process for 10kV SiC IGBTs and PiN diodes for high-power applications.
Understanding the Quickly Evolving AI Data Center Architecture (Podcast)
The ALATTIS program targets a domestic manufacturing process for 10kV SiC IGBTs and PiN diodes for high-power applications.
The new device combines 20mΩ on-resistance with dual-side cooling for compact, high-density 800V power conversion.
Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap Materials!
The DF150 operates from -46°C to +60°C and combines 91% efficiency with IP67 protection for demanding power applications.
The collaboration combines digital control with GaN and SiC technologies to address efficiency and power-density requirements in AI systems.
Low forward voltage, low leakage, and high avalanche capability improve efficiency and reliability in demanding automotive applications.
The infrastructures combines 800 VDC power delivery, liquid cooling and prefabricated infrastructure to support NVIDIA DSX AI factories.
Programmable alerts and accumulated-energy thresholds enable real-time monitoring of load changes and long-term power behavior.
Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on High-Voltage Conversion Drives T&D Modernization, Metal Oxide Varistors, Power Rail Sequencing and Ripple Characterization with Oscilloscopes!
The Interport platform reaches 400kW in essentially the same footprint, with efficiency above 98.5% for high-density power applications.